Cangzhou, Hebei, China
Response Time: < 24h
Response Rate: 100%
| Model No.: TSU650 | Place of Origin: China |
Product overview
1. Applicability: Widely used in colleges, research institutes and enterprises for device R&D and manufacturing as well as small batch trial production.
2. Product features: equipped with circular magnetron sputtering target, rectangular magnetron sputtering target, multi-arc target, magnetic filter arc source, etc., with multiple functions such as magnetron and ion plating, suitable for many Universities and scientific research units with various coating needs.
3. Main purpose:
►This equipment can be used to prepare single-layer and multi-layer metal films, dielectric films, semiconductor films, sensor films, heat-resistant alloy films, hard films, corrosion-resistant films, DLC, etc.;
►Examples of film layers: silver, aluminum, copper, nickel, chromium, nickel-chromium alloy, titanium nitride, titanium carbide, titanium aluminum nitride, chromium nitride, titanium oxide, aluminum oxide, ITO, silicon dioxide, etc. ;
►Applications: cutting tools, moulds, electronic accessories, metal casings, ceramic substrates, etc.
►Suitability: suitable for pilot test and small batch production and precision production of precious metals.
►Professional: Specialized, functional, platform-based, refined design to meet the development and preparation of different functional film systems; fully automatic control, humanized design for easier operation and stable process repeatability.
Technical parameters
|
Model |
TSU650 |
|
Vacuum chamber structure |
Vertical cylindrical front door, double-layer water cooling, multi-purpose flange interface |
|
Vacuum chamber size |
Φ650×H650mm |
|
Workpiece frame size |
Φ490mm, 4~6 station male/automatic workpiece rack |
|
Workpiece rack baking temperature |
Room temperature～500±5℃, adjustable and controllable (PID temperature control) |
|
Movement mode of workpiece rack |
0~5RPM adjustable |
|
Auxiliary ion source |
Bias, linear ion source assist (optional) |
|
Cathode |
Rectangular magnetron target, cylindrical target, planar arc source, magnetic filter arc source (optional) domestic and imported target or power supply is optional |
|
Control method |
PLC control / industrial computer automatic control (optional) |
|
Area |
Host L2800×W1200×H1950mm |
|
Total Power |
≥60KW |
